問題的提出

在采用SIMetrix 8.3軟件進(jìn)行E類放大器的仿真過程中，用到了NEXPERIA公司的NMOS管器件PMH550UNE, 但在SIMetrix 8.3的庫中沒有該器件，因此需要導(dǎo)入第三方庫文件.

通常的辦法是從生產(chǎn)該器件的公司網(wǎng)站上下載器件庫文件，導(dǎo)入到SIMetrix中. 庫文件為后綴為*.lib 文件，同時(shí)導(dǎo)入器件的符號(hào)文件，后綴為 .sym。

但在NEXPERIA公司的網(wǎng)站上只能下載到NMOS器件PMH550UNE的SPICE的網(wǎng)表文件，如下所示：

******************************************************************************************************** * * Nexperia PMH550UNE * Polarity N - Channel * Ratings 30V/550.0mOhm/1A * Revision N#: 1.0 * Created on 2019-01-28 11:02:22 * Please visit www.nexperia.com for latest revision release * ******************************************************************************************************** * * Model generated by Nexperia * Copyright(c) 2018 * All rights reserved * * Contains proprietary information which is the property of Nexperia. * ********************************************************************************************************.SUBCKT PMH550UNE D G S* Package impedance LD D 5 5.000p RLD2 D 5 12.57m RLD1 5 4 10.00u LG G 1 218.2p RLG G 1 548.3m LS S 8 315.1p RLS2 S 8 792.0m RLS1 8 7 26.64m* Drain,gate and source resistances RD 3 4 416.4m TC= 2.582m,1.000n RG 1 2 19.00 RS 6 7 1.000u* Body Diode RBD 9 4 327.5m TC= 4.000m,23.00u DBD 7 9 D_DBD RDS 7 4 1.948G TC= -5.000m* Internal MOS M1 3 2 6 6 MINT* Gate leakage and gate capacitance RGS 2 6 11.05MEG CGS 2 6 26.60p* CGD C11 11 12 1E-12 V11 11 0 0Vdc G11 3 2 VALUE {V(13,0)*I(V11)} E11 12 0 3 2 1 E12 13 0 TABLE {V(12)} + (-4.5,75.0) (-1.56,75.0) (0.01,28.8995) (0.1,24.986) (0.2,21.397) (0.5,13.477) (1.0,9.4903) (2.0,7.4342999999999995) (3.0,6.5095) (4.0,5.9329) (5.0,5.5226) (6.0,5.2074) (8.0,4.741700000000001) (10.0,4.4043) (12.0,4.142799999999999) (15.0,3.84) (24.0,3.2755).MODEL MINT NMOS Vto= 870.5m Kp= 3.892 Nfs= 343.4G Eta= 0.000 + Level= 3 Gamma= 0.000 Phi= 600.0m Is= 1.000E-24 UO= 600.0 + Js= 0.000 Pb= 800.0m Cj= 0.000 Cjsw= 0.000 Cgso= 0.000 Cgdo= 0.000 Cgbo= 0.000 + Tox= 100.0n Xj= 0.000 + Vmax= 618.1.MODEL D_DBD D Bv= 38.68 Ibv= 250.0u Rs= 1.000u Is= 3.412p + N= 1.070 M= 704.3m VJ= 200.0m Fc= 500.0m Cjo= 80.77p Tt= 18.50n.ENDS PMH550UNE******************************************************************************************************** * - Limited warranty and liability - * * Information in this document is believed to be accurate and reliable. However,Nexperia does not give * any representations or warranties,expressed or implied,as to the accuracy or completeness of such * information and shall have no liability for the consequences of use of such information. * Nexperia takes no responsibility for the content in this document if provided by an information source * outside of Nexperia. In no event shall Nexperia be liable for any indirect,incidental,punitive, * special or consequential damages (including - without limitation - lost profits,lost savings, * business interruption,costs related to the removal or replacement of any products or rework charges) * whether or not such damages are based on tort (including negligence),warranty,breach of contract or * any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, * Nexperia's aggregate and cumulative liability towards customer for the products described herein shall * be limited in accordance with the Terms and conditions of commercial sale of Nexperia. * ********************************************************************************************************

現(xiàn)需要將該網(wǎng)表文件導(dǎo)入到SIMetrix中。

解決方法

下圖為E類放大器的SIMetrix的仿真原理圖，任意從庫中選擇一NMOS管，如信號(hào)BSC12DN20NS3_L0, 如下如Q1器件.

右鍵Q1器件，選擇View/Edit model, 如下圖所示

上欄為Global library model, 用戶不能夠編輯，下欄為Local model, 用戶可編輯.

將需要仿真的器件PMH550UNE的SPICE網(wǎng)表文件內(nèi)容覆蓋到下欄中. 同時(shí)做以下修改：

將.SUBCKT PMH550UNE D G S行的內(nèi)容改為：.SUBCKT BSC12DN20NS3_L0-Q1 drain gate source，注意，Q1為器件在原理圖中的標(biāo)號(hào)，要與原理圖對應(yīng)，否則會(huì)出現(xiàn)找不到…的錯(cuò)誤. 同時(shí)注意引腳順序?qū)?yīng)，原文中的MOS管BSC12DN20NS3_L0 的引腳標(biāo)號(hào)順序?yàn)閐rain gate source, 我們仿真用的MOS管PMH550UNE的引腳標(biāo)號(hào)順序?yàn)镈,G,S. 漏極、柵極、源極引腳的順序不要搞錯(cuò). 如下圖所示

將 .ENDS PMH550UNE 行的內(nèi)容改為 .ENDS BSC12DN20NS3_L0-Q1

仿真測試

在Q1的Edit Model欄中選擇Use global library model, 即采用BSC12DN20NS3_L0進(jìn)行仿真，結(jié)果如下圖所示.

選擇Use local model, 即選擇PMH550UNE進(jìn)行仿真，仿真結(jié)果如下圖所示：

總結(jié)

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