發(fā)表論文

(1)?Carrier-Number-Fluctuation induced ultralow 1/f noise level in top-gated graphene field effect transistors,?ACS Applied Materials & Interfaces,?2017,?通訊作者(2)?The two timescales in the charge trapping mechanism for the hysteresiss behavior in graphene field effect transistors,?Journal of Materials Science: Materials in Electronics,?2016,?通訊作者(3)?Intrisic carrier mobility extraction based on a new quasi-analytical model for graphene field-effect transistors,?Journal of Physics D: Applied Physics,?2016,?通訊作者(4)?Hydroxyl-free buffered dielectric for graphene field-effect transistors,?Carbon,?2015,?第?1?作者(5)?The sheet resistance of graphene under contact and its effect on the derived specific contact resistivity,?Carbon,?2015,?通訊作者(6)?The electrochemical transfer of CVD-graphene using agarose gel as solid electrolyte and mechanical support layer,?Chemical communication,?2015,?通訊作者(7)?Effect of source-gate spacing on direct current and radio frequency characteristic of graphene field effect transistor,?Applied Physics Letters,?2015,?通訊作者(8)?The anisotropy of field effect mobility of CVD graphene grown on copper foil,?Small,?2014,?通訊作者(9)?Study of AlN dielectric film on graphene by Raman microscopy,?Appl. Phys. Lett,?2009,?第?1?作者(10)?On the design of base-collector junction of InGaAs/InP DHBT,?Science in China Series E: Technological Sciences,?2009,?第?1?作者(11)?Common-base multi-finger submicron InGaAs/InP double heterojunction bipolar transistor with fmax of 305 GHz,?Solid-State Electronics,?2008,?第?1?作者(12)?High-Breakdown-Voltage Submicron InGaAs/InP Double Heterojunction Bipolar Transistor with ft of 170 GHz and fmax of 253 GHz,?Chin. Phys. Lett.,?2008,?第?1?作者(13)?Surface-recombination-free InGaAs/InP HBTs and the base contact recombination,?Solid-State Electronics,?2008,?第?1?作者

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