• 應(yīng)用平臺：STM32F030F4P6
• ST官方庫：STM32Cube_FW_F0_V1.9.0

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背景知識

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• 絕大多數(shù)的單片機和微控制器（ARM,x86)，地址空間都是以字節(jié)為單位的，也就是說一個地址是一個字節(jié)。
• Flash存儲器有個特點，就是只能寫0，不能寫1。所以如果原來的地址有數(shù)據(jù)了，意味著有一些位為0，這些位就相當(dāng)于無效了。所以必須寫之前確保他們都為1，只有擦除才可以。另外每次擦除都必須擦除一個4K大小的扇區(qū)，這是flash的特性所決定的。
• 對Flash操作前必需打開內(nèi)部振蕩器。?

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參考：stm32的學(xué)習(xí)—FLASH的操作和使用

STM32F030F4P6的Flash存儲簡介

STM32F030F4P6硬件配置：??FLASH (16KB)??RAM (4KB)?
（包含4個扇區(qū)，1個扇區(qū)包含4個頁，每頁有1Kbyte空間）?
用戶可以對Flash進行program?和?erase?操作。

Main Flash memory programming?
The main Flash memory can be programmed?16 bits?at a time.?
Flash memory erase?
The Flash memory can be erased page?by page?or completely (Mass Erase).?

Flash memory addressesSize(byte)NameDescription

0x0800 0000 - 0x0800 03FF	1 Kbyte	Page 0	Sector 0
0x0800 0400 - 0x0800 07FF	1 Kbyte	Page 1	Sector 0
0x0800 0800 - 0x0800 0BFF	1 Kbyte	Page 2	Sector 0
0x0800 0C00 - 0x0800 0FFF	1 Kbyte	Page 3	Sector 0
0x0800 1000 - 0x0800 13FF	1 Kbyte	Page 4	Sector 1
0x0800 1400 - 0x0800 17FF	1 Kbyte	Page 5	Sector 1
0x0800 1800 - 0x0800 1BFF	1 Kbyte	Page 6	Sector 1
0x0800 1C00 - 0x0800 1FFF	1 Kbyte	Page 7	Sector 1
0x0800 2000 - 0x0800 23FF	1 Kbyte	Page 8	Sector 2
0x0800 2400 - 0x0800 27FF	1 Kbyte	Page 9	Sector 2
0x0800 2800 - 0x0800 2BFF	1 Kbyte	Page 10	Sector 2
0x0800 2C00 - 0x0800 2FFF	1 Kbyte	Page 11	Sector 2
0x0800 3000 - 0x0800 33FF	1 Kbyte	Page 12	Sector 3
0x0800 3400 - 0x0800 37FF	1 Kbyte	Page 13	Sector 3
0x0800 3800 - 0x0800 3BFF	1 Kbyte	Page 14	Sector 3
0x0800 3C00 - 0x0800 3FFF	1 Kbyte	Page 15	Sector 3

STM32F030F4P6的Flash讀寫參考代碼（HAL庫）

/* Base address of the Flash sectors */ #define ADDR_FLASH_PAGE_0 ((uint32_t)0x08000000) /* Base @ of Page 0, 1 Kbyte */ #define ADDR_FLASH_PAGE_1 ((uint32_t)0x08000400) /* Base @ of Page 1, 1 Kbyte */ #define ADDR_FLASH_PAGE_2 ((uint32_t)0x08000800) /* Base @ of Page 2, 1 Kbyte */ #define ADDR_FLASH_PAGE_3 ((uint32_t)0x08000C00) /* Base @ of Page 3, 1 Kbyte */ #define ADDR_FLASH_PAGE_4 ((uint32_t)0x08001000) /* Base @ of Page 4, 1 Kbyte */ #define ADDR_FLASH_PAGE_5 ((uint32_t)0x08001400) /* Base @ of Page 5, 1 Kbyte */ #define ADDR_FLASH_PAGE_6 ((uint32_t)0x08001800) /* Base @ of Page 6, 1 Kbyte */ #define ADDR_FLASH_PAGE_7 ((uint32_t)0x08001C00) /* Base @ of Page 7, 1 Kbyte */ #define ADDR_FLASH_PAGE_8 ((uint32_t)0x08002000) /* Base @ of Page 8, 1 Kbyte */ #define ADDR_FLASH_PAGE_9 ((uint32_t)0x08002400) /* Base @ of Page 9, 1 Kbyte */ #define ADDR_FLASH_PAGE_10 ((uint32_t)0x08002800) /* Base @ of Page 10, 1 Kbyte */ #define ADDR_FLASH_PAGE_11 ((uint32_t)0x08002C00) /* Base @ of Page 11, 1 Kbyte */ #define ADDR_FLASH_PAGE_12 ((uint32_t)0x08003000) /* Base @ of Page 12, 1 Kbyte */ #define ADDR_FLASH_PAGE_13 ((uint32_t)0x08003400) /* Base @ of Page 13, 1 Kbyte */ #define ADDR_FLASH_PAGE_14 ((uint32_t)0x08003800) /* Base @ of Page 14, 1 Kbyte */ #define ADDR_FLASH_PAGE_15 ((uint32_t)0x08003C00) /* Base @ of Page 15, 1 Kbyte *//* Private define ------------------------------------------------------------*/ #define FLASH_USER_START_ADDR ADDR_FLASH_PAGE_15 /* Start @ of user Flash area */ #define FLASH_USER_END_ADDR ADDR_FLASH_PAGE_15 + FLASH_PAGE_SIZE /* End @ of user Flash area */#define DATA_32 ((uint32_t)0x12345678)/*Variable used for Erase procedure*/ static FLASH_EraseInitTypeDef EraseInitStruct; uint32_t Address = 0;/*** @brief Main program* @param None* @retval None*/ int main(void) {/* STM32F0xx HAL library initialization:- Configure the Flash prefetch- Systick timer is configured by default as source of time base, but usercan eventually implement his proper time base source (a general purposetimer for example or other time source), keeping in mind that Time baseduration should be kept 1ms since PPP_TIMEOUT_VALUEs are defined andhandled in milliseconds basis.- Low Level Initialization*/HAL_Init();/* Configure the system clock to 48 MHz */SystemClock_Config();/* Unlock the Flash to enable the flash control register access *************/HAL_FLASH_Unlock();/* Erase the user Flash area(area defined by FLASH_USER_START_ADDR and FLASH_USER_END_ADDR) ***********//* Fill EraseInit structure*/EraseInitStruct.TypeErase = FLASH_TYPEERASE_PAGES;EraseInitStruct.PageAddress = FLASH_USER_START_ADDR;EraseInitStruct.NbPages = (FLASH_USER_END_ADDR - FLASH_USER_START_ADDR) / FLASH_PAGE_SIZE;if (HAL_FLASHEx_Erase(&EraseInitStruct, &PageError) != HAL_OK){/*Error occurred while page erase.User can add here some code to deal with this error.PageError will contain the faulty page and then to know the code error on this page,user can call function 'HAL_FLASH_GetError()'*//* Infinite loop */while (1){/* User doing something here */}}/* Program the user Flash area word by word(area defined by FLASH_USER_START_ADDR and FLASH_USER_END_ADDR) ***********/Address = FLASH_USER_START_ADDR;while (Address < FLASH_USER_END_ADDR){if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_WORD, Address, DATA_32) == HAL_OK){Address = Address + 4;}else{/* Error occurred while writing data in Flash memory.User can add here some code to deal with this error */while (1){/* User doing something here */}}}/* Lock the Flash to disable the flash control register access (recommendedto protect the FLASH memory against possible unwanted operation) *********/HAL_FLASH_Lock();/* Check if the programmed data is OKMemoryProgramStatus = 0: data programmed correctlyMemoryProgramStatus != 0: number of words not programmed correctly ******/Address = FLASH_USER_START_ADDR;MemoryProgramStatus = 0x0;while (Address < FLASH_USER_END_ADDR){data32 = *(__IO uint32_t *)Address;if (data32 != DATA_32){MemoryProgramStatus++;}Address = Address + 4;}/*Check if there is an issue to program data*/if (MemoryProgramStatus == 0){/* User doing something here */}else{while (1){/* User doing something here */}}/* Infinite loop */while (1){} } 《新程序員》：云原生和全面數(shù)字化實踐50位技術(shù)專家共同創(chuàng)作，文字、視頻、音頻交互閱讀

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